940nm Strained Quantum Well Lasers And Reliability Study

940nm wavelength strained quantum well(QW) semiconductor laser is a new type of semiconductor laser, which has taken great attentions in recent years in the world, has wide application potential and fast progress in fabrication. Our work in device design, material growth and reliability analysis ect. have been done as follows:1. Impacts of structure parameter of well layer, waveguide layerand cladding layer etc. of 940nm wavelength strained QW semiconductor lasers on threshold current, temperature characteristic, divergence angle and efficiency have been analyzed, and the thickness and content of well layer, waveguide layer and cladding layer have been optimized and designed.2. A commonly used approximate formula on beam divergencein far field at present has been optimized, the result of simulation shows that our approximate formula has good precision, can greatly simplified calculation and provide convenient design basis for design in device architecture in actual used waveguide layer of semiconductor laser.3. GaAs, AlGaAs single-crystal material and InGaAs strainedQW structures have been grown by molecular beam epitaxy (V80H MBE). The influences of individual growth conditions such as growth temperature, growth velocity, flux ratio of â…¤/â…¢, substrate orientation, doping, oval defect ect. on the growth quality are analyzed. Some material measuring methods such as RHEED, PL, CV, X-ray double crystal diffraction, SEM etc. are used to measure and analyze, and obtain the process conditions optimized most of high quality strained QW lasers' material growth.4. reliability analysis of 940nm wavelength strained QW lasershas been done, large optical cavity structure, current non-injection areas by using n-GaAs as stopping layer and He ion implantation, technology of chip bonding by Au-Sn solder have been used to raise the threshold level of catastrophic optical damage effectively.