Research And Design Of Radio Frequency Ultra-wideband CMOS Low Noise Amplifier

In recent years,communication technology is rapidly developing.Ultra-wideband system with the high-throughput have become a very popular communication technology.Ultra-wideband low-noise amplifiers,as the first-stage system of ultra-wideband receivers,have a large impact on their modules such as mixer,so it is necessary to study ultra-wideband low-noise amplifiers.First,the role of ultra-wideband low noise amplifiers and the results at home and abroad in recent years are described in this paper.Second,the main performance parameters of low noise amplifier,such as noise performance,input impedance matching performance,linearity and circuit gain,are briefly introduced.Simultaneously,the characteristics of three integrated passive components of resistance,capacitance and inductance are introduced.In the third chapter,the common low-noise amplifier circuit structure is introduced and summarized,and its advantages and disadvantages are briefly introduced.In addition,the on-chip inductor is the most common passive device in the design of ultra-wideband low-noise amplifier.The research on its model is very meaningful.Therefore,an improved single-?model was also proposed in this chapter.Through improvements to various circuit results,a high-gain,low-power Ultra-wideband low-noise amplifier circuit operating at 4-18GHz and 3-5GHz were designed based on these results.The main research work and results are:(1)An improved single?lumped parameter equivalent circuit model is proposed for the on-chip spiral inductor.The proposed model can simulate the substrate coupling effect,skin effect and proximity effect under high frequency.The parasitic coupling effect of the substrate was realized by R-L-C parallel structure.Parameter values can be easily obtained using the two-port analysis method and the quasi-linear function method.The proposed on-chip inductor equivalent circuit model simulation data and HFSS electromagnetic simulation data has a high degree of fit in the 0-20GHz frequency range.(2)An ultra-wideband low noise amplifier with a bandwidth of 4-18GHz is designed and researched.The amplifier is based on the TSMC 0.18?m RF CMOS process,and the gain and bandwidth were improved by adopting a triple-resonance matching network technique.In addition,the power consumption was reduced by introducing a substrate bias technique.The circuit is optimized and simulated by ADS,and the influence of temperature and process angle are analyzed.The results show that the amplifier operates at a temperature of 25?.The operating bandwidth is 4-18GHz,and the gain is 15.95dB to 18.73dB.The gain flatness is 2.78dB.The noise figure is less than 4.9dB,where the minimum noise figure is 3.22dB.The operating voltage of the circuit is 0.9V,and the power consumption is only for 5.715mW,the amplifier can be widely used in low-power,wide-band radio frequency integrated circuit.(3)A 3-5GHz ultra-wideband low noise amplifier circuit based on the TSMC0.18?m RF CMOS process is designed.In this circuit,by combining g_m-boosted and noise-cancelling technology,the gain,power consumption,and noise of the circuit are improved.In the input stage,the use of g_m-boosted technique achieved the matching of the input impedance.In the amplifier stage,the use of g_m-boosted technique and current-reused technique has significantly increased the circuit gain,and the use of noise-cancelling technique and g_m-boosted technique improved the circuit's noise performance and power consumption.At the same time,in order to suppress the Miller effect in the circuit and further reduce the power consumption of the circuit,a PMOS transistor was introduced in the circuit.Using ADS to optimize the circuit simulation,the results show that the amplifier has a gain of 20.02-21.6dB and a noise figure of1.17-1.63dB in the 3-5GHz range.The circuit operates at 0.8V and consumes 9.44mW.