Design Of Low Noise Amplifier With High Gain And Low Noise Figure

As wireless technology enters the 5G era,the new generation of high-performance RF transceiver systems has put forward more stringent requirements.Based on the high gain and low noise figure,since the low noise amplifier is located at the forefront of the entire RF system,its performance is directly affected.The noise figure and receiving sensitivity of the system are one of the most critical parts of a radio frequency system.This paper mainly introduces the design of a low noise amplifier working in the Sub 6G frequency band using GaAs pHEMT process.First,some theories of low-noise amplifiers are elaborated,and two circuit structures are designed for this subject in combination with common circuit structures.The cascode structure is used to obtain higher gain,and the structure is optimized on the basis of the cascode structure to achieve high gain flatness,low noise figure,and broadband requirements.Secondly,for the problem of power consumption,the current multiplexing structure is introduced and optimized,and a low-power circuit implementation is obtained.Finally,in order to meet the needs of LTE communication,the shutdown function of the bias circuit,that is,Shutdown mode,is designed and optimized,which greatly improves the shutdown and turn-on time.Under the ADS simulation software,the layout is optimized,and EM simulation is carried out.The final tape verification verified that the two structure amplifiers met the requirements of the indicators.The waves are all below-10 dB,achieving a typical gain of about 16 dB,achieving high gain flatness(about 2dB in-band),small noise figure,and good Shutdown mode.In the design of the low-noise amplifier,the indicators are mutually restrictive.We need to balance among the indicators to get the best performance.