Important Module Within The New Type Of Embedded Memory Study

In recent years, the concept of Internet Of Things had been proposed and promoted rapidly. It is partly due to people's increasing purcuit of more convenient life. Besides, the rapid development of microelectronics technology contributes a lot to the promotion of the technology of Internet Of Things. On the other hand, the development of it asked for higher requirments on the performance of embedded memory. The traditional embedded memory had many limits in many aspects such as scaling-down, cell size, speed, power consumption and chip density.The next generation of embedded memory can be divided into three categories:high-speed embedded non-volatile memory, low power embedded non-volatile memory and embedded DRAM, respectively, for different applications. Research for new memories is mainly focused on the development and improvement of the storage cell, storage structures and storage media. Besides, others will focused on how to achieve basic reading and writing functions, the further realization of memories' high-speed, low power, high density or other characteristics.This thesis is concentrated on memory circuits design. In this thesis, three power supply schemes is proposed according to laboratory's memory materials characteristics, which are suitable for three different memory application. In addition, a PLL is designed for the high-speed embedded DRAM to create a stable clock which might be used to facilitate the functional verification and adaptive testing. ALL the circuits proposed in this thesis are designed custom for new RRAM and eDRAM.