Font Size: a A A

Vdmos Power Transistor .600v/10a Transformer High Current Simulation Analysis And Development,

Posted on:2011-03-07Degree:MasterType:Thesis
Country:ChinaCandidate:J KangFull Text:PDF
GTID:2208330332477083Subject:Software engineering
Abstract/Summary:PDF Full Text Request
Power devices as a development of integrated circuits, application of increasing scope, VDMOS transistor as an important kind of power devices with high input impedance, fast, no secondary breakdown and so on. Domestic power semiconductor manufacturers more and more into research and development in the VDMOS.This thesis 600V/10A high current high voltage VDMOS power transistors as the main object of study, analysis of VDMOS working principle, design a suitable product to market VDMOS and capacitance characteristics in terms of innovation and exploratory research.Mainly for the following work:1. VDMOS power device structure and working principle;2. products corresponding to 600V/10A the VDMOS structure and parameters of features, has been designed for production test flow 600V/10A product layout;3. Research 600V/10A VDMOS manufacturing process, design flow of sample testing process, and finish the sample, to obtain certain characteristics of data;4. Completion of the study sample data and the software simulation to study the capacitance parameter optimization method.
Keywords/Search Tags:power devices, VDMOS, capacitance characteristics, software simulation
PDF Full Text Request
Related items