Design And Manufacture Switchable VDMOS Using The SILVACO Simulation

To meet the demands of MOSFET and power devices and Vertical-Double-Diffused MOSFET(ab.VDMOS) which has high switch speed,the article simulates this characteristic of VDMOS in the low press condition,and obtains parameter at the same time by EDA software SILVACO.The research of Power VDMOS devices are very popular in the current,this article uses SILVACO software to simulate the process of VDMOS devices,such as the kinds and thickness of the epitaxial layer:lithography,the thickness of oxide layer, the condition of ion-implantation,impurity type,doping concentration,the depth and range of etching etc.,and then to simulate main parameters and the special property curves.This course can show us that the design of VDMOS devices is whether or not acceptable.This paper use the ATHENA software to simulate the process of the VDMOS, and use ATLAS to extract parameters and characteristic curves,then to prove this simulation by experiment.In detail,I have designed the n-type VDMOS cell.The cell have been successfully fabricated squareness figure which is 17 micrometers width and 17 micrometers length with 100V breakdown voltage and 0.2Ωconducting resistance.