SUB-90 Nanometer CMOS Device PSP Modeling And Parameters Extraction

With increasing system complexity due to high-level integration, an efficient circuit simulator with accurate device models becomes an indispensable tool in ULSI designs. A complete device model must be capable of predicting device characteristics for all operating models over a wide range of device dimensions.Although a semi-empirical model such as BSIM4, reserves the basic function of physical model and uses the empirical equations with fitting parameters to replace the classical equations, thus solves small geometry effect and secondary process variation. However with the development of device geometry's scaling down to 90nm or even more smaller, BSIM4 model already has no way to deal with the more applications on analog and RF circuits. Hence here we need more advanced modeling soluation --- surface-potential-based PSP model.This paper explores modeling technology and parameters' extraction based on the electronical data of 90nm technology and device's physical effect. First all, summarize the device's basic physical effect and introduce some new effects which have been found in the near future. Second, research PSP model theory to set up its theory elements of parameters extraction. In addation, also discuss the contents of test structure design and data measurement, which are very importmant to found an accurate and integrated model. Third, try to do a suit of full parameters' extraction. Finally, summarize the whole work and give the suggestion and expectation for the future modeling technology and parameters' extraction.