The Modeling And Characteristics Research Of 0.5μm SOI-CMOS

With the devlopment of IC technology and the scaling characteritic length,some problems appeared more evidently on device physics,devices structure and process technology. SOI (silicon on insulator) technology represented unique structures to elimenate the limites of the troditional bulk silicon devices,which also had the advantages of high integration,small parasitic capacitance and less probability of Lath-up.It must be a more promising technology in the future.There is only a few of companies and research institutions which had dedicated at the SOI devices research and manufacture. Under this background,this thesis had done some changes on the conditional bulk-silicon process and formed a better SOI device process flow to explore the devices made on the SOI substrate.At the same tilme we made the design rules and drawn the layout of test devices.And the original test and analysis were done to the taped-out devices.This thesis had done some researches on the model parameters extraction of PD-PMOS finally.On the basis of lots of investigates, the characteristic work in the thesis are summarized as follows:1. An improvement on the troditional bulk-silicon process was implemented, resulting in proper process flow and process parameters.And also the process analysis were done to the taped-out devices so as to give some instrument to the second tape out.2. The devices made on the 190nm top silicon film worked in Partially Depleted (PD)mode.There were many intrinsic parasitic effects,such as floating body effect,Kink effect,self-heating effect,etc.To research the devices performance, four types of devices was designed,which were named T-BC,H-BC,FB and Normal.According to the new design rules,we designed some devices of different sizes corresponding to each type.3. The PD-PMOS devices represented a more better performance. So the DC model parameters extraction was fulfilled based on the BSIM3v3 model.To get the parameters precisely,the devices were divided to four groups:Big device,Long-channel devices,Wide-devices and Small-devices.Different para -meters were extracted from the corresponding devices by the fitting of test curves and simulation curves.Finally the model card including the parameters extracted was used to all the devices.The good fitness of all the devices indicated that this parameters extration were feasible and correct.