The Research And Design Of CMOS RF Power Amplifier

With the development of wireless communication, people need more advanced technologies of communication, and hope they can keep touch with other person by voice, data or picture in any time or anywhere.Power amplifier is the key part of the RF transmitter, and it is also the most power consumption modules in RF system. The primary function of RF power amplifier is to amplify the RF signal and get a large output power. The essential of amplifying signal is to transform DC power into high frequency power. Comparing with other RF modules, the basic design aim is large power, high linearity and high efficiency.The thesis introduces the design of a power amplifier based on a 0.18um CMOS technology for 3G mobile phone. Simulation results and layout are provided. It is implemented in two-stage circuit and biased in Class A. The first stage is a cascade circuit, and the second stage use a differential pair. By using a balance-unbalance circuit, it can turn the double-output to single-output. At a supply voltage of 3.3v, its gain is20dB, PldB=13dBm, the maximum output power is 16.25dBm and the bandwidth is from 1GHz to 2GHz.