| More and more solid state transmitters have replaced vacuum-tube transmitters because they have the advantages of high reliability, long lifetime, low operating voltage, graceful degrading, and so on. With the continuous improvements of microwave power transistor, the technologies of full solid state transmitters are gradually mature up to S band. But full solid state transmitters at C band develop slowly because of the impact of single-transistor power, arts, cost and other factors. Two types of C band solid state amplifiers are studied in this thesis; they can be the base of C band full solid state transmitters.C band solid state amplifiers can be used at three cases in radar transmitters: 1. as drive amplifiers of vacuum-tube transmitters, 2. as power amplifier modules at every stage of full solid state integrated transmitters, 3. as T channel power amplifiers of T/R module in active phased-array radar. According to different use two kinds of C band solid state amplifiers are researched and developed, their power are 30W and 300W respectively.Starting from design principles, general design methods of microwave solid-state power amplifier are introduced, and design methods of matching circuit by impedance are introduced in detail. On the basis of above, the design and experiment of C band solid state amplifiers are expounded. Through actual design examples the selection of power devices and microstrip substrate are discussed, and bias circuit, pulse modulation, control and protection circuit, power divider/combiner, structure and EMC of amplifiers are described. All problems during experiments and their solution are analyzed. The test results are provided. The results prove that power amplifiers can meet the demand of specifications, which can provide references for future engineering applications. |
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