Design And Simulation Of GaAs-Based Resonant Tunneling Piezo-Resistive Pressure Sensor

This thesis analyses the current research situations home and abroad. To design a GaAs-Based Resonant Tunneling Piezo-Resistive Pressure Sensor, and to analyses its performances with computer software. Datum and diagrams from the thesis will boost the development of GaAs-Based Resonant Tunneling Piezo-Resistive Pressure Sensor.Firstly, the formulas of displacement and stress are deduced to provide theoretical basis for simulation, analysis and the disposition of Double Barrier Resonant Tunneling (DBRT) on strain film. All about the formulas are based on the theory of small flexivity.Secondly, Static characteristic of sensor chips are analyzed by using ANSYS on the basis of the Finite-Element Analysis (FEA) theory. The stress distribution of strain film under various sizes and comparison between computational datum and simulation data are demonstrated and visual result is achieved. Dynamic characteristic of sensor chip is studied in modal, harmonic and transient structure dynamics by ANSYS software, and dynamic response characteristic is attained from the analysis result.Thirdly, we make use of the formula of transmission coefficient and tunneling current density to discuss the relationship that the transmission coefficient and I-V characteristic rely on barrier-width and well-width in AlGaAs/GaAs/AlGaAs quantum well structures. And the tunneling current, peak-to-valley current ratio and resonance energy are obtained. We discuss the changes I-V curve under the different strains, which simulates the tunneling current, peak-to-trough ratio under the strains.Finally, we take the sensor's sensitivity of sensitive components made of silicon film to compare with and DBRT structure film, find that the later heighten a lot.