Fabrication And Simulation Research On Resonant Tunneling Devices

Resonant tunneling device is a new compound semiconductor device. The research of fabrication and simulation on Resonant Tunneling Diode (RTD) and Resonant Tunneling Transistor (RTT) is mainly discussed in this dissertation. Four types of resonant tunneling device have been fabricated. The research on device simulation and modeling, measurement and reliability analysis, logic circuit realization are explained in detail. The innovation points in this dissertation can be concluded as follows:1. in the aspect of design and fabrication: GaAs RTD in mesa structure has been fabricated successfully, the Peak to Valley Current Ratio (PVCR) reaches 4.2 at room temperature; GaAs planner RTD based on boron-implantation and deep groove structures have been proposed and the boron-implantation planner RTD has been first fabricated domestically whose PVCR is 3.5 at room temperature; Schottky gate RTT (SGRTT) and RTD/HEMT combination RTT are designed and developed, the Gm of SGRTT reaches 3.5mS and the gate voltage controlling ability on peak voltage of RTD/HEMT combination RTT is in a range of 1.5-7.7 ;2. in the aspect of device simulation, the uni-travelling-carrier photodiode (UTC-PD) and RTD monolithic integration, mesa RTD, planner RTD and SGRTT are all simulated by Atlas software. The relationship between the structure parameters and the I-V characteristics of each device has been researched, such as emitter area, doping concentration and barrier thickness. The different I-V characteristics of SGRTT in forward and backward biases also have been researched.3. in the aspect of circuit application, the Monostable-Bistable Transition Logic Element (MOBILE) and flexible logic gate circuit based on RTD device have been realized and measured, the realized logic contains AND/OR/NAND/NOR. The circuit model of SGRTT and the unification model of RTT devices are also proposed.4. in the aspect of measurement and reliability, the series resistance of RTD has been measured by different methods that is varying temperature method, addition resistance method and bridge method, the feature of different methods and the influence on the series resistance measurement are analyzed. The invalidation experiments on mesa RTD device have been carried on in the situation ofγ-radiation and electronic pulse, the results show that the radiation protective effect of compound device is better than MOS device.The research on development of RTD and RTT is illustrated in this dissertation, that contains material design, layout design, device simulation, fabrication, measurement, reliability analysis and circuit application. All these work can establish the foundation of RTD theory and experiment in future.