Research On The Design And Application Of Terahertz Band Resonant Tunneling Resonator

Terahertz(THz)technology,as a major emerging technology scientific field in the 21st century,has gradually shown its unique superiority and broad application prospects in many important scientific research fields such as physics,materials science,communication transmission and electronic information.The development of terahertz technology largely depends on the development of wave source devices capable of generating terahertz waves.Because of its high-frequency and high-speed characteristics,resonant tunneling devices have become the first choice for researchers to make terahertz wave source devices.Using RTD as an active device or electromagnetic wave excitation device,and antenna as a load device or electromagnetic wave transmitting device,the organic combination of the two can form an integrated terahertz band resonant tunneling oscillator.Therefore,it is necessary to further explore and understand the structure,material properties and device performance of RTD devices in the terahertz band.It is also the significance and value of this study.This paper mainly conducts the following simulation and analysis studies:(1)A new Ga N material RTD device structure model with sub-well structure and a double barrier single potential well RTD device structure model based on single-layer graphene and boron nitride(BN)heterostructures were constructed.The unbalanced Green's function method is used to simulate important electrical parameters of the device,such as peak voltage V_P,peak current I_P,and peak-to-valley current ratio(PVCR).The specific parameters of the device structure,such as the thickness of the sub-well layer and the material composition,the barrier layer,the buffer layer,and the main quantum well layer,were analyzed in detail on the device performance,and according to the simulation results,the device physical It explained and analyzed the tunneling characteristics of RTD with multi-quantum well structure,and obtained the relevant rules of its changes,which played a certain guiding significance and role for the structural design and parameter selection of RTD devices in the future.(2)Based on the design of the RTD device,simulation and analysis are performed on the oscillator device RTO based on the resonance tunneling effect.The small-signal equivalent circuit simulation method is used to design the equivalent circuit of the integrated RTO of the RTD device with integrated antenna structure,and the relevant material parameters of the RTD device are combined to obtain the oscillation frequency and output oscillation power of the oscillator.Based on the structure of the Ga N RTD device proposed in the above research,the RTO oscillator circuit model was input in the PSpice simulation environment.Finally,the simulation results reached a peak oscillation frequency of about 1.5 THz,and the corresponding output oscillation power was close to 30?w.The relations between the current oscillation frequency and power of graphene RTD devices and the device and circuit parameters were quantified.Finally,at the application level,the external feedback effect of the RTD oscillator was modeled.It was found that under the effect of the negative feedback effect,the device's received power and oscillation frequency change law,which is important for future research and the promotion of terahertz technology applications.significance.This article has conducted a comprehensive research and analysis of terahertz wave source devices RTD and RTO oscillator devices,and has certain reference value for the future research and development of terahertz devices.