The Design Of High Efficient WBG Power Amplifier

The Wide-Band-Gap semiconductor material such as SiC, GaN, which is regarded as the 3-rd generation semiconductor material, has better performance on break down voltage, higher heat conduction rate, higher electronic saturation rate as well as better ability of anti-radiation. They are, therefore, appropriate for producing the components of high temperature, frequency and power. At present, the development of traditional semiconductor components is almost approaching the limit, especially in the field of the high frequency and temperature. The research of Wide-Band-Gap semiconductor material will surely be a hot spot which affects the trade of the electronics and communications.Being different from these kinds of working states which have fixed bias voltage, such as the Class-A, the Class-B, the Class-AB and Class-C. This paper introduces and designs the Class-E and Class-F power amplifier. They increase the efficiency by improving the nonlinear condition. The active device works at both the breakdown and the saturation area. The current and the voltage achieve to the peak value in the half cycle and don't achieve the zero value simultaneity. The power amplifier seems like the effect of"switch"and transmits with high efficiency, on which the deterioration power achieves the least. Based on the research of the basic theory of these power amplifiers, we find new ways of microstrips'realization of the amplifier. Then we simulate several high efficient power amplifiers at L or S band with Advanced Design System2005, and analyze their frequency spectrum of the basic wave and the harmonic wave and the stability with the large signal model. Finally, by testing the samples, the good agreement between practical measurements and the simulation results proves that the design method is reliable.