Design Of A High-Performance Magnetron Sputtering Source

From 70's twenty Century, the early Magnetron Sputtering has been founded; the Magnetron Sputtering technology has got great development in the fields of high speed growth of metal, semiconductor and isolator film. The production should especially pay attention to such aspects as deposition rate, process stability as well as the utilization rate of target materials which need the optimized design of whole system and target design is the key. Our country has greatly trailed the advanced ones in target analysis and design, so researches in this field will have important academic and practical values.Firstly, on the basis of the magnetron Sputtering theory and experimental problems, some problems in magnetron sputtering were discussed, such as low utilization rate of target material, low sputtering rate, low deposition rate as well as the instability of the sputtering process. Then the solving method was given that the rationality of the target structure can be judged by the distribution of the electromagnetism.Secondly, by the Finite element simulation of the magnetic field, the structure parameters that influenced the distribution of magnetic field of the target were analyzed systematically, such as magnetic yoke, the difference between the heights of interior and exterior pole, shunt, and so on. From the simulation results, the conclusion that the structure can be optimized by adjusting the structure parameters was made, and in the same time, got the ideal transverse component of magnetic flux intensity by shunting magnetic lines (using shunt structure) and adjusting the difference between magnetic poles' heights.Thirdly, the thesis given the other considerations besides the magnetic filed, such as heat consume, electricity isolation, shield, etc. Additionally, a suit of integrate target was designed.At last, experiments were designed to validate the performance of the target. By testing its characteristic curve in the process of brightness discharge and deposition rate, the target was proved can be used and had the better performance in the aspects of deposition rate and the utilization rate of target materials.