The Trituration Of Key Technology Of Magnetic Confinement Magnetron Sputtering Source

Magnetron sputtering technology is also called the low temperature sputtering technology, it is one of the common-used method of film deposition. Compared with evaporation, it has many advantages:the uniformity and compactness of the thin film are good, film-substrate adherence is strong, the component of the thin film is easily controlled and so on. Presently, magnetron sputtering technology is extensively applied in optical thin-film, micro-electron, semiconducting material, surface microstructure treatment, surface modification and so on. The low utilization rate of target and the low sputtering rate can be a shortcoming in the magnetron sputtering technology, so raising the utilization rate of target and the sputtering rate are an important point.In this paper, a section of new structural magnetron sputtering source which based on the magnetic mirror principle is designed——magnetic confinement magnetron sputtering source. Magnetic confinement is a kind of magnetic mirror which is strong in the both sides and weak in the middle in the space, magnetic mirror effectively restrains the moving electron and ion in the middle region. This device mounted the magnet in the both sides of the target along the horizontal direction, this form can restrain the plasma above the target surface, realizing the large scope of sputtering on the target surface in the plasma under the effect of electric field.Through testing the magnetic confinement magnetron sputtering source which has been in the lab, the plasma region had been expanded, the utilization rate of target and the sputtering rate had been enhanced, but there was arc discharge in the experiment. In order to solve the problem and raise the utilization rate of target and the sputtering rate, a new magnetic confinement magnetron sputtering source was designed on the basis of original device in this article, the improvements include the distribution of magnetic circuit, the anode position and the way of reference gas. I used the Ansys finite element analysis software to design and analysis the magnetic field, the analogue value and the value of the magnetic field strength distribution which obtained actually were basically tally, while designing the electric field, I redesigned the position of the anode, final phenomenon showed that arc discharge was better improved.