Read Failure Analysis For Flash Memory At Low Temperature And Low Vcc

Benefit from consumer electronic product requirement and population of electronic facilities, flash memory have substituted RAM (random access memory) and became the core part of memory family. Some giant semiconductor company like Samsung, Intel etc., are now trying their best to innovate the new technology to develop higher speed, higher capacity, higher reliability and low power-consume, lower cost product. The occupation of market depends on the individual plant overall competitivity. How to maintain and sustain the competitivity is the unavoidable task and challenge to each manufactory plant. Besides expedite the new product, how to lower the cost and reduce the waste and reject product is also an important section. And the ordinary customers are first focus on the reliability and stability of the product besides new style and variable functions. So the higher and lower temperature working stability also face inevitable challenge.NOR flash working status at low temperature was studied in this thesis. By analysis the reliability test at low temperature and low working voltage (Vcc) and collecting the failure data and analysis the data to find out the flash failure mechanism and search for solution and prevention of failure. Through adjusting the time delay in testing program clock to solve the testing problem of failure, improve the productivity of product and lower down the reject unit.The topic analysis the failure mechanism and testify the failure principle with corresponding prevention and corrective action. It deeper the understanding of flash memory testing principle and provide reference and solution for new coming product and contribute for NOR flash memory circuit design in future.