Research On The Structure And Circuit Of Resonant Tunneling Device

Resonant Tunneling Diode (RTD) is a new kind of negative resistance device based on the quantum tunneling phenomena. It has many advantages such as high responding speed, high working frequency, low power consumption, multi-function and so on. As the dimension of traditional CMOS device reaches its limit, resonant tunneling devices are displaying their significance more and more.The team of new semiconductor device and integrating in Telecommunication College of Tianjin University have successfully fabricated the Resonant Tunneling Diode(RTD) in our country, whose peak-to-valley current ratio (PVCR) reaches 7.6 and its maximum oscillation frequency reaches 54GHz at room temperature. Additionally, we also have manufactured Resonant Tunneling Transistor (RTT) together with the National Defense Technology Point Laboratory, and the PVCR goes up to 47.After introducing the basic theory of superlattice, the paper studies the operation principle and the design of RTD. The physics-based RTD current-voltage equation is adopted to establish the DC circuit model of the RTD by PSPICE software, What influences the current-voltage characters of RTD is discussed, which makes the reach on resonant tunneling device more convenient later.To make up the shortage of mesa RTD, a new planar configuration is introduced, planar RTD is fabricated with the self-aligned process which is compatible with that of silicon on integrated circuits technology and it has been confirmed that RTD manufactured in this way can work well. At the end of this paper, some circuits consisted of resonant tunneling device is analyzed, which offers a good reference for the research on it in future.In a word, this paper gives the whole dissertation on the device design, function analysis, circuit simulation and experiment data to the resonant tunneling device and lay the foundation of the future research on it.