The Research And Manufacture Of Static Induction Devices

Static Induction Devices (SIDs) mainly include Bipolar-Mode Static Induction Transistor (BSIT), Static Induction Transistor (SIT) and Static Induction Thyristor (SITH). Being one kind of novel power devices, SIDs for high operating frequency and high power application has attracted many scientists' great attention and has gained significant developments, since SIDs have many excellent electrical performance, such as low distortion, low noise, good linearity, no second breakdown, negative temperature coefficient, high output power and so on.In this paper, we described the operational mechanism of SIT (SITH), emphasized the structure, I-V characteristic, the theory of the current transition and the formation of channel barrier of SIDs. Based on these theories, we discussed and analyzed the regulation of constructional parameters, material parameters, and technological parameters, and their value has been given. We also used the L-edit software to design our new layouts.Under the goal of getting good electrical property SIDs, Combining with our experience and problems, in the epitaxial process, the self-doping phenomena are examined, in the etching process, the three trench-layouts are used, and the processes have been stabilized. Step by step we improved part of process after a great deal of experiments. The normal I-V characteristics are obtained by experimental study. By testing chips, there are great improvements in basic electrical property. All of these measures prove our manufacture plan is correct and reasonable.