Design Of High Voltage Pulse Power For Anodic Bonding And Study On The Processing Property Of Bonding

In this paper, anodic bondings of glass/silicon, glass/aluminium as well as glass/kovar alloy were achieved. The physical and chemical traits and technological properties of anodic bonding were investigated. The microstructure of bonding interface was examined and analyzed by optical microscope, SEM and EDX. The formation of the transition layer at the interface was also analyzed.A high-voltage pulse power applied in the anodic bonding was designed. The system of this power is made up of high-voltage direct current operating circuit, pulse control circuit, data gathering and showing circuit. And on the basis of this power, the experiments of anodic bonding between the borosilicate glass and silicon were carried out. In the anodic bonding process, the average of current and the rate of bonding raised notably.Anodic bonding of glass/aluminum and glass/kovar alloy was achieved, and the interface of specimen was analyzed by SEM and EDX. It was shown that the bonding process of glass to metals can be dissociated into three parts: electrostatics interface attraction, anodic oxidizes and solid phases diffusion reaction; the temperature, voltage and ion conductivity of the glass and its surface roughness were the important influence factors on the joining rate and quality. The joining area was composed of glass, transitional area and metal. The microstructures of the transitional area and interface regions were the main influence factors on the joining strength. The pillar crystals that parallels to electrical field were benefit for the joining strength.A new method of using RF magnetron sputtering device to deposit thin glass film on the ceramic substrate were also discussed in this article. It was showed that sputtering pressure and radio frequency power was the two key factors. If the power did not change, the sputtering pressure and the thickness of the film had a close relationship. If the sputtering pressure increased, the thickness of the film increased too. When the sputtering pressure did not change and the RF power was lower, deposit speed was proportional to the power of radio frequency. With the increment of the power of the radio frequency, there would be more argon ionized, and there would be more ions to beat the target, so the deposition rate would be increased. With the further increment of the power, the deposition rate tended to be slow. The character of the film was studied by means of XRD , EDX and SEM etc. The results indicated that the chemical composition did not change compared with the borosilicate glass. The glass thin film was suitable for anodic bonding as the intermediate layer. It is essential for realizing anodic bonding of metal to ceramic.