| In industrial application, the magnetron sputtering technology has become an effectivemethod of films deposition. It has been widely applied to the fields of solidmicroelectronicã€optical films and surface modification.Magnetron sputtering deposited functional films such as ITO on flexible organicmaterial, as the flexible substrate can not withstand high temperature, therefore it isdifficult to obtain high-performance functional films.For the disadvantage of this situation,this paper analyzed the mechanism of applying plasma method deposited functional filmsby magnetron sputtering, the method of decoupling the electron temperature (intensityvolume) and the electron density (extensive quantity) of plasma parameters was proposed.In this way, it contented the requirement of the microcosmic reaction energy (activity) andthe macroscopic low-temperature. In order to achieve decoupling, in this paper, a new typepower supply—pulse modulation RF power supply was designed and produced. The powersupply was able to provide the conditions of high pulse power and low gas temperature tosolve the shortcomings of depositing the functional films on flexible substrates bymagnetron sputtering at low temperature.The detailed parameters of the prototype are that: the output voltage waveform is sinewave, which frequency is13.56MHz; the output power can be varied between0W and120W; the frequency of pulse modulation signal is0.1kHz to50kHz adjustable; the dutycycle of the Signal is10%to90%adjustable; The conversion efficiency of the powersupply is greater than50%.The RF power supply of this paper used high-frequency and high-power FET aspower amplifier tube, which is low supply voltage and can output high power. According toMagnetron sputtering demand the performance of the power supply, the overall designscheme of the power supply was proposed. The design of the power supply was dividedinto two modules: The RF power supply circuit and the Pulse modulation circuit. The RFpower supply circuit was composed of a crystal oscillator circuit and three power amplifiercircuits. The article discussed the topology design of each one power amplifier circuit andthe choosing requirement of power amplifier tube in detail. The emphasis of discussion wasthe design of the output stage power amplifier circuit—the B push-pull power amplifiercircuit, and the power synthesis principle of the output stage power amplifier circuit wasdiscussed too. The design of the pulse modulation circuit was divided into pulse signalcontrol circuit, insulation driving circuit and temperature protection circuit. According to the requirement of pulse modulation circuit to the duty cycle of pulse signal, the insulationdriving circuit was selected the high-speed optocoupler insulation driving circuit; inallusion to the feature of the RF power supply at work is easily get heating, so thetemperature protection circuit was designed for improving the reliability of power supplysafety when it at work.The paper also discussed in detail the problems which encountered in the process ofdebugging the power supply and the methods of solving these problems, measuring theparameters and voltage waveforms of the pulse modulation RF power supply, the designgoals and the feature of the pulse modulation RF power supply were achieved. Finally, thefunction of the pulse modulation RF power supply achieved the desired effect by applyingit to the experiments of magnetron sputtering. |
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