Application Of Non-equilibrium Green's Function In Nano-MOS Device Analysis

In current IC industry, the feature size of MOSFET has shrunk below 100nm. Although all parts of the device are interrelated, some parts are in Micro-scale and some are in nano-scale. In this case, when the carriers transport, not only the Drift-Diffusion transport mechanism should be included, but also the Quantum Tunneling, Hot-carrier Emission and other different kinds of scattering transport mechanisms should be included. Because it is really hard to consider all those transport mechanisms at the same; time, so it is an important issue for researchers to set up an analytical method handling all those mechanisms.In this thesis, the carriers' transport mechanism in nano-scale MOS device is analyzed using Green's Function. Using Green's Function is very easy to handle ballistic transport or scattering transport, and can get a more accurate and reliable result. So it is specially fit for analyzing the transport characteristics when the device size is less than 30nm. In this thesis, the characteristics and method of Green's Function are introduced. Then an analytical compact threshold voltage model is developed, which accounts for different device physical effects in the nano-scale double-gate MOSFETs. The boundary condition and a method for reducing the convergent time are described. Some parts of this paper have been published in Chinese Physics.