Semiconductor Lasers With Ring Resonators

For the development of monolithic integrated optoelectronic communication, we have designed and fabricated a new ring semiconductor lasers with simple fabrication process and great potential for integration. On the base of the mode theory, curvature loss and fabrication processes analysis of the ring semiconductor lasers, we propose the device design for achieving the stimulated emission of radiation in ring semiconductor lasers.808nm wavelength single quantum well AlGaAs/GaAs epi-layer wafer has been used to fabricate the lasers. In configuration, we designed a narrow ridge ring resonator and pillbox resonator. A series of ring resonators of different radius from 50μm--500μm was fabricated. An etchant with better isotropic etching properties by H₃PO₄ system was found in the process of wet etching ridge waveguide in this paper.Finally, we have measured the ring semiconductor lasers in room temperature and the results show that these lasers only working in fluorescence. The test shows that all devices with 5μm stripe width have a high loss, and it is possible to make ring semiconductor laser stimulate by increase the width of the ridge.