180NM Process Embedded One Cell Two Bit Core Flash Memory Design

The semiconductor memory was invented in 1960's. Now the proportion of it is more and more larger in the semiconductor memory market. It is used in the field of computer, communication, traffic, space flight etc. widely. As we all know, Flash memory [1], as the most full-blown non-volatilization semiconductor memory, is used most widely. And it is very important in the memory market because of its high density, to be programmed and erased easily, non-volatilization etc.Along with the development of semiconductor fabrication technology, the area of the memory cell in flash memory chip is reduced, the integration is improved, then the flash memory can meet the demand of the market for large density. Now, 180ns is used in the fabrication of the flash memory widely.In order to reduce the cost of flash memory and improve the density, a new type of flash memory was invented. It is different with the traditional flash memory in which one flash memory cell only can save one bit data. It can save two or more than two bits data in one cell. So it enlarged the density of the memory. It can use the one half of memory chip area to save the same information now.Nowadays, along with the development of SOC [2], embedded flash memory is being developed and used widely. The thesis will descript how to design a embedded flash memory to meet the ARM processor's requirement based on the new type flash memory cell which can save two bits data using 180ns process.