Test Bench For High Voltage Experimental IGCTs

First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor. IGCT has the switching character of high-interdiction and low on-state voltage drop, which makes its broad use in mid-/high-power disposal area. At present, IGCT has been used widely abroad and some domestic research institutes are researching IGCT's characters for its producing and application in future.Our laboratory cooperates with the Power Electronics Department of Zhu Zhou Time Groups for IGCT's development. For the maximum parameter 4500V/4000A of one sort of IGCT, we design and develop a test bench for IGCT's high-voltage switching experiment. With the test bench we will get some useful data for bettering its research and manufacture.The paper presents the whole design technique of the test bench, based on which we successfully develop the test bench equipment. The paper firstly presents the structure of IGCT test bench and its two cabinets for high-voltage producing and test circuit. Then the paper introduces the design for high-voltage power supply module and its hardware and software in detail, and then introduces the control system and EMC design for the test bench in detail. Embedded microprocessor ARM7 is used for whole control circuits. After that the paper introduces the design theory, practical circuit and test technique for test circuits of the bench. At last the paper presents the analysis and summary for some waveforms in different typical test experiments.