| The research in this thesis is supported by the National Basic Research Program of China (Grant No:2010CB327600, Grant No: 2003CB314902), with Professor Xiaomin Ren as the chief scientist, the National High Technology Research and Development Program of China (Grant No:2006AA03Z416, Grant No:2007AA03Z418), the project of the National Natural Science Foundation of China (Grant No:60576018) and the key-program project of the National Natural Science Foundation of China (Grant No.90601002).With the rapid development of knowledge economy, the demand to information technology (IT) is increasing on a large scale. In order to overcome the bottle-neck of high speed transmission, switching and management in optical fiber communication network, it provides a total solution for photon or optoelectronic technology substituting for micro-electronic technology. The growth of photonic or optoelectronic integration will promote the prosperity of modern fiber communication systems.In this doctoral thesis, a great deal of research has been focused on the optimized conditions of flow and thermal patterns of vertical rotating Thomas Swan MOCVD reactor at low pressure, and a new approach to the InP/Si wafer bonding mechanism that explains the basic steps using boride treated surface during the pretreatment and annealling processes. These results are beneficial to accurate reproducible control, sharp interfaces and uniformity in doping, nano-scale thickness and composition of materials growth. Research results have been achieved as follows: 1. A systematic study has been performed to investigate the flow and thermal patterns of vertical rotating Thomas Swan MOCVD reactor at low pressure, using 2-D dynamic modeling. By varying and calculating the several important process parameters of the reactor, the optimized conditions of the uniform distributions of velocity and temperature profiles in steady state have been obtained.2. The investigations on the theory of MOCVD process optimization show that the studies, which resulted in the correlations of transport phenomena, allow an accurate forecast of the flow mechanism inside the reactor with any external process conditions. Under the conditions of Q=10—15 slm, p=6.66—26.7 kPa, T=880—1000 K andω=90-110rpm, a good type of flow and thermal fields in the reactor can be maintained.3. Based on optimal process parameters, it is the first time that time-dependent models with the step response perturbation of the total gas rate can help identify the visual transient behavior inside the reactor and analyze the mechanism of delay time, relaxation oscillation and pulsative oscillation. These results are beneficial to the accurate reproducible control, sharp interfaces and uniformity in doping, nano-scale thickness and composition of each layer for semiconductor material growth inside the MOCVD reactor.4. It is the first time that this model has been proposed for the structure of vitreous as well as crystalline layer with multicomponent oxides, Na2O, SiO2, B2O3, In2O3 and POX. There are the mixing bonds among the covalent, ionic crystal bonds, hydrogen bridge bonds and van-der-Waals forces at the bonding interface layer.5. For the first time, the low melt glass elements B, In, P are more contribute to reduce the melt point of the compounds and form a thin layer with amorphous by using boride surface treatment. Thus, it can be concluded that the ultrathin layer Na2O-SiO2-B2O3-In2O3-POx and the oxygen bridging bonds are formed at the bonding interface by annealing. 6. For the first time, the reactive by-product H2(g), PH3(g), H2O(g) have to be removed from the bonding interface to avoid the buildup of an internal gas pressure that can lead to a low bonding energy. The formed amorphous layer most likely helps the H2(g), PH3(g), H2O(g) diffuse quickly and efficiently in the oxides.7. We design a new high clean, low cost wafer bonding glove box. It is beneficial to carry out wafer cleanness, surface activity, pre-wafer bonding and improve the feasibility and work efficiency.
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