Experiments Of Low Temperature Wafer Bonding And Analysis On Relevant Dynamics

The research work of this thesis was mainly supported by the sub-project Ⅱ of the major project "Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications".The sub-project is "Innovation and Fundamental Research on Low-temperature Wafer Bonding and Quasi-monolithic Optoelectronics Integration Technologies". Additionally,Part of research was also supported by the project"Material Technology Research on GaAs,InP-based Functional Tapered Structure and Applications in Novel Optoelectronic Devices", from the National Natural Science Foundation of China(Project No.90201035).The speedy development of optoelectronic and microelectronic technology requires that the dimension of devices should become smaller and smaller, while the performance of devices become more and more extensive.Therefore,integrating dissimilar functional devices together on a single chip is being actively pursued in the field of optoelectronic device.Howerver,breaking through the limitation of integrating heterogenous material is the prerequisite for achieving device integration.Naturally the crux of the matter that we seek for is combining dissimilar semiconductor materials to their additive advantages.The ultimate aim is to achive one or more devices on each of these semiconductors on a single chip and thereby monolithic or quasi-monolithic integration. The quality of GaAs/InP heterostructures grown by epitaxial growth technology is too poor to fabricate the device...