The Design Of 1550nm Ridge Waveguide High Speed Laser Chip

The high-speed modulated semiconductor laser is the hot topic in the photoelectron field. They are the key devices in the high-speed fiber communications system and the phase control radar system etc.In the 1550nm band, the fiber has the least loss, but its drawback is the big dispersion. The emergence of the dispersion-shifted fiber solved this problem. Thereby the 1550nm high-speed modulated laser becomes the preferred light source of the fiber communication system.The main assignment is the design of the 1550nm RW laser chip. To accomplish this task, we do the design from two aspects: the design of material structure and the subsequent process to confirm the modulation characteristic of the laser;the waveguide design to confirm the mode characteristic. This paper also introduces simply the chip process flow, fiber coupling and the device package.This assignment selects GaInAsP/InP material system to grow 1550nm high-speed laser. We study the modulation characteristic and the waveguide structure of the laser. The emphases of this study are how the waveguide structure controls the modes and the effect of parasitic capacitance on the modulation characteristic, bring forward a new process method to reduce the parasitic capacitance to one magnitude, therefore increased the modulated bandwidth.Ultimately, we determined the optimal design scheme and verified the feasibility of this kind of design, the prospective performance parameter was realized: its wavelength is 1546nm, the threshold current is 11.8mA, its output power is 5.1mW, the spectral half-width is 1.8nm.