Design Of Low Noise Amplifier For Wideband RF Receiver Front-Ends

Currently, Internet of things has been proposed and developed. As a result, more and more new wireless standards are coming up to markets continuously. To meet the market demand, a single radio mobile RF device that can handle the multi-standards and multi-band signals is realized. On the other hand, as the first stage of wireless receiver, low noise amplifier (LNA) plays an important role in the communication system. So the research of wideband CMOS LNA is imperative under this situation.In this thesis, the filter wideband CMOS LNA is deeply studied, and a 0.2-6GHz wideband LNA is designed. Firstly, this thesis analyzed high-frequency parasitic effect of common components under RF CMOS process, and discussed several important indicators of LNA:noisy, linearity and impedance matching. Secondly, common LNA topology was analyzed, in which common-gate structure was selected as input stage. And the design of the main structure is proposed, and so the specific design methods for requirements. Thirdly, the designed wideband LNA was simulated with the simulator SpectreRF in Cadence. Finally, the layout of the wideband LNA is completed by using the layout tool of Cadence Layout Editor.The wideband LNA is designed in SMIC 0.18μm RF CMOS process, and the simulation results show that, it works 0.2-6GHz, and the noise figure is 2.9-5dB. The gain is better than 12.5dB with the impedance matching S11&S22 of-10dB, and the IIP3 is be-8dBm.