Font Size: a A A

Investigation On The Preparation Of ZnO Thin Films And The Ultraviolet Detector

Posted on:2011-10-20Degree:MasterType:Thesis
Country:ChinaCandidate:X L ZhangFull Text:PDF
GTID:2178330332957416Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
ZnO is a new type of direct wide-bandgap compound semiconductor material. Due to the large bandgap (3.37eV at room temperature) and the large exciton bingding energy (60meV), ZnO material is attracting more attentions. ZnO material also has excellent chemical and thermal satiability, it can emit ultraviolet laser and is also an ideal material for ultraviolet detector and short-wavelength laser. ZnO material is regarded as one of substitute for GaN material using as a new generation of photoelectrical material. It has extensive applications in the fields of solar cells, piezoelectric device, varistor, gas sensor and liquid crystal display.In this paper, the fabrication principles of ZnO thin films were illustrated. Hightly c-preffered oriented ZnO thin films were fabricated on quartz by RF reactive magnetron sputtering method. The structure and properties of ZnO thin films grown at different O/Ar and different sputtering voltage were characterized. Furthermore, Al/ZnO/Al structure and p-NiO/n-ZnO ultraviolet detector were fabricated, and the performance of these two detectors were tested. At last, the experimental conclusions were drawn.
Keywords/Search Tags:ZnO, RF Magnetron Sputtering, Ultraviolet Photodetector
PDF Full Text Request
Related items