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Magnetron Sputtering Preparation Of Mg <sub> X </ Sub> Of Ni <sub> 1-x </ Sub> O Thin Films And Their Characterization

Posted on:2007-04-23Degree:MasterType:Thesis
Country:ChinaCandidate:Z G ZhangFull Text:PDF
GTID:2208360185482650Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The cheap, reliable ultraviolet detector becomes a research hotspot with the development of the ultraviolet detect technology, especially for the ultraviolet detector which is worked at the solar blind range whose wave length is in 240~280nm at the surface of the earth. The ultraviolet detector worked in the solar blind region could be used to detect the tail flame of the missile, the chemical flame and short wave light communications in military affairs and civil domain. At present, the research of ultraviolet detector is focused on the AlGaN system, which is made up by VCD or MBE and so on. The development of AlGaN system in photoelectron devices is limited by the substrate material, although a big progress is acquired by using the AlGaN system as the solar blind region ultraviolet detector. At the mean while, the process of the AlGaN system is complex and the cost is high. However the preparation process of oxide is simple, cost is lower. So discover the oxide material which could be used as solar blind region ultraviolet detector is very meaningful. The research of oxide material as ultraviolet detector is focused on ZnO and MgZnO system. At the room temperature, the band gap of ZnO is 3.37eV, which is not suitable for ultraviolet detector. Because the difference between the crystal structure of MgO and ZnO, the solubility of them is finite, the band gap of the film could be adjust only in a region, the spectrum response could not be adjusted to the solar blind region, although the band gap of ZnO is adjusted by MgO. For solve this problem, we research the MgxNi1-xO system hope madding the band gap of the film be adjusted by adjusting the content of the film to the solar blind region.Three chinaware target is sputtered on the silicon and glass substrate which are x=0.1, 0.2, 0.3 with JPGF-450 magnetron sputtering equipment. Change the sputtering power with P=100W, 150W, 200W and the whole flux of 1 pa oxygen and argon with content of c=0.0, 0.2, 0.4, 0.6, 0.8, 1.0 at background vacuum of 10-3 pa. The MgxNi1-xO sample and the the sample sputtering at different anneal temperature are acquired after 30 minutes. The samples are analyzed by XRD,AFM and ultraviolet spectrum. The results are as followed:1. The substrate is very important There is no crystal generated on the 7059 glass, even after anneal. The film is acquired on the silicon substrate at the direction of (200)...
Keywords/Search Tags:solar blind material, MgNiO, magnetron sputtering, ultraviolet detect, band gap modulation
PDF Full Text Request
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