The Characterization Of ZnO-based Uv Photodetectors Enhanced Via Localized Surface Plasmons

ZnO is a direct band gap semiconductor material(~3.37 eV)with wurtzite structure.It has the advantages of wide band gap,environmental friendliness,low growth temperature,low cost,low defect density and so forth.And the band gap energy of Zn1-xMgxO(0?x?1)can be adjusted from 3.37 eV to 7.80 eV by doping the element of magnesium.In recent years,interest in the research of this material has been increasing due to their advantages.In this paper,ZnO and MgZnO films were prepared by radio-frequency magnetron sputtering technique.And metal-semiconductor-metal(MSM)structured ZnO-based ultraviolet photodetectors were prepared.We also discussed the quality and optical property of ZnO and MgZnO films.Both the photics absorption and the responsivity of photodetectors were enhanced by the theory of the metal localized surface plasmon.The main research work is as follows:1.The embedded depth in ZnO ultraviolet photodetector of Pt nanoparticles were different,and the results show that the responsivity of the detector is increasing as Pt nanoparticles in ZnO thin film layers with the increased to embedded depth of the Pt nanoparticles.2.We have fabricated controlling responsivity enhancement range and high-performance ZnO MSM sandwich ultraviolet photodetectors.Under back side illumination or front side illumination,the responsivity enhancement range decreased gradually with the decreased to embedded depth of the Pt nanoparticles.3.we have fabricated high-performance ZnO MSM ultraviolet photodetectors by embedding the Pt nanoparticles multilayer.It is found that the introduction of Pt nanoparticles with suitable number of layers is favorable for the significant enhancement of the responsivity.4.We have fabricated enhancement of responsivity by decorated Pt nanoparticles on the surface of the ultraviolet photodetector.Note that the responsivity increased as the time of sputtering Pt nanoparticles increasing and then decreased.