Study On NBTI Of 0.13μm PMOSFET

With the continuous scaling down of the device size, NBTI(Negative Bias Temperature Instability) becomes more and more serious, NBTI makes characteristics and parameters of PMOSFET grow worsen , and has been one of the most important limiting factors to PMOSFETs and circuit lifetime.The dissertation has the depth research on PMOSFETs NBTI using the 0.13μm cu interconnect technology. We design the testing circuit layout for PMOSFETs NBTI effect. Considering the references, we design the experiment of the PMOSFETs NBTI and have the depth discussions on related issues. The 0.13μm cu interconnection process PMOSFETs NBTI is studied and the lifetime model of 0.18μm CMOS process PMOSFETs NBTI is also studied. The parameters degadation of 0.18μm CMOS process PMOSFETs under NBTI are discussed.According to previous NBTI results, the threshold voltage shift is as a failure criterion. The NBTI has a great impact on threshold voltage shift of PMOSFET, and we extract the time parameters, activation energy, electric field acceleration factor and parameters of PMOSFET for NBTI effect which described degradation of 0.13μm cu interconnection process PMOSFETs. According to lifetime model, we calculate that a100mV shift of threshold voltage need 18.1 years at Vg=1.32V and establish 0.13μm cuinterconnection process NBTI effects.The dynamic NBTI is discussed in different frequency, different duty cycle, different positive and negative gate bias, and we analyze the different size PMOSFET of threshold voltage grow worsen.