In the paper, a980nm intracavity-contacted VCSEL is designed and fabricated, which is based on the point of reducing in the heat of the device. Under the same epitaxial growth, the output characteristics of the device of the conventional structure and the intracavity-contacted structure are respectively simulated by software PICS3D.The results of simulation and calculation show that, the differential resistance and the threshold current of intracavity-contacted VCSEL are respective20Ω and of6.23mA, which are reduced by approximately3.33Ω and29%in the comparison with the traditional VCSEL. According to the experimental results, the differential resistance and the threshold current of intracavity-contacted VCSEL are respective23Ω and8.75mA, which are reduced by approximately3.2Ω and34%in the comparison with the traditional VCSEL. The simulation result is consistent with the experimental result well. Simultaneously, the experimental result also shows that the maximum output power of intracavity-contacted VCSEL is11.8mW. which is increased by37%than the one of the device of the traditional structure. The simulation and experimental results show that the intracavity-contacted VCSEL has better thermal characteristics and optical and electrical properties than the traditional VCSEL. |