The Preparation And Characterization Techniques Of The Films In MIM-FEA

The preparation and characterization techniques of the films in the MIM-FEA are investigated. Cr, Cu, SiO₂ and Al₂O₃ thin films were deposited on glass substrates by magnetron sputtering techniques with targets. The films were characterized by several analysis techniques, such as SEM, TEM, XRD, EDX, AFM, PROFILOMETER and so on. And the testing results were discussed. The technics parameters were acquired with which the better films can be deposited above. The preparation and capability test of the MIM-FEA were also investigated. Cr-Cu compound films deposited by DC magnetron sputtering were used as the electrode materials of the MIM-FEA. The relations between the film's growth rate and the sputtering pressure and power were discussed. And the relations between the substrate temperature and the resistivity were discussed. And the relations between the sputtering parameters and the film adhension were discussed. The configurations, elements and the uniformities of thickness were characterized and discussed. The results show that: the compound films have better qualities which were deposited at 120 ℃. Their surface nanostructure is dense and smooth. And their element is pure. The uniformities of thickness(the area of substate glass is 606mm×396mm) are all better(≤±7.5%). At the same time, SiO₂ thin films were deposited by RF magnetron sputtering and Al₂O₃ thin films were deposited by medium frequency reactive magnetron sputtering. SiO₂ and Al₂O₃ thin films were used as the insulating barrier materials in the MIM-FEA. The effects of technics parameters on the film growth and the"Hysteresis loop"which lay in the process of sputtering aluminum oxides films were studied. The results show that: SiO2 and Al2O3 thin films have better qualities when they were deposited at 150 ℃. They are all amorphous. And their nanostructures are dense. And their surfaces are smooth. The atomic ratio of O to Si in the SiO₂ film is about 2. But the oxygen atom is redundant in the Al2O3 film. According to the increasing of the sputtering power, the surface roughness of these films is increasing. But the sputtering pressure affects the roughness unobviously. The uniformities of thickness are all better(≤±7.7% ). In the end, preparation and technics parameter of the MIM-FEA are introduced at length. The compound films of SiO2 and Al2O3 are used as insulating barrier materials. This is a new way with the study of MIM-FEA. It reduces the pores and defects in the large-area films. The compound films improve its insulative ability. The current-voltage (I-V) curve and the breakdown voltage of MIM-FEA are obtained. The results show that: the threshold voltage of this MIM-FEA is lower (about 10V) and voltage-standing capability is better. And the video image can be displayed on the prototype of this MIM-FEA.