Development Process Of MIM Electron Emission Structure Used In FED

The development process of a new kind of electron emission structure is introduced in this paper. This electron emission structure is made up of metal-insulator-metal films, which can be used in field emission display, The Cr/Cu-SiO2/Al2O3-Cr/Cu films are ordinally grown on glass substance by ways of vacuum sputtering, and the MIM structure is formed through silk-screen prindt and chemical erode accordingly. During the Cr/Cu bottom electrode deposited, the effect of glass substance temperature on film micro-structure is analyzed. In the course of insulator film formed, the relations between the film growth rate and the sputtering pressure and power are discussed. The hysteresis loop appearing in reactive sputtering Al2O3 film is especially studied, and reactive sputtering Ta2O5 film is also mentioned. The I-V curve and the voltage-standing of this MIM structure are also obtained when measured its performance. The purpose to decrease the emission voltage is achieved by and large through this way of structure improvement, and the character and video frequency image can be display on the sample screen...