The Research Of RTD/HEMT/MSM's Optoelectrical Integration

The optoelectrical integrated circuit (OEIC) is attractive in lightwave communication systems because of its ability of electrical logic, optical detecting and receiving, its high performance and small size. The further research on optoelectrical integration technology of Resonant Tunneling Diode (RTD), High Electron Mobility Transistor (HEMT) and Metal-Semiconductor-Metal Photo Detector (MSM PD) has been done. RTD/HEMT/MSM design theory, material design and process preparation, devices and circuit simulation, measurement of their application circuits are studied in this dissertation. The main products of this dissertation are as follows. 1. The relations between the parameters in RTD PSpice device model and simulation curves are analyzed. The values of those parameters are definitely modified for modeling the fabricated RTD devices. 2. HEMT device simulation is performed by ISE-TCAD software. Its output characteristic is close to experiment results, which shows some instructions in device optimization and application circuit simulation. 3. The method of making MSM on semi-insulated substrate is amended. Etching the substrate into converted-step shape before sputtering metal can dramatically improve the optical response of MSM PD. 4. Two kinds of monolithical opto-controlled negative difference solid circuits are fabricated. One is an opto-controlled switch, composed of a RTD driver serially connected by a MSM loader. The other is an opto-controlled converter, which consists of a RTD driver parallely connected by a MSM input as an optical gate and a RTD loader. The circuits' logical function is simulated by PSpice based on the builded RTD and MSM circuit models. By compareing the simulation results with the tested results, the working theory and logical function of the circuits are validated. As far as we know, the fabricated circuits are not reported in domestic and aboard papers.