The Simulation And Fabracation Of The Resonant Tunneling Transistor

This thesis is based on the project"the structure research of the resonant tunneling transistor"which is studied by new semi-conductor device and integrating team in Telecommunication College in TJU and National Defense Technology Point Laboratory. For researching the influence on the characteratics of resonant tunneling transistor (RTT) by the structure parameters, it has been finished that the device simulation by the ATLAS software, device fabrication, device test and comparison and analysis to the test results. So far, we have fabricated the first resonant tunneling transistor in our country, whose current peak-valley ratio (PVCR) reaches 47.The thesis introduces completely the RTT research process, including material and layout design, device simulation, chip fabrication, test, the result analysis and the application in the circuit. All of these are narrated in detail, giving emphasis to the device simulation and chip test and analysis. In the aspects of simulation, the Schottky gate resonant tunneling transistor (SGRTT) and RTD/HEMT RTT are simulated, especially on the structure and technical parameters, such as the area of the device emitter, the vertical position of the gate metal and the doping concentration near the barrier. The results of simulation are good for serving the designer at the research stage and provide the date to the chip fabrication. After analyzing the test result, the thesis discusses two questions: the I-V characteristic difference between emitter grounding and collector grounding, and the threshold voltage VT shifting with the gate voltage. The simulation provides the proof to the author and be helpful for the analysis on the I-V characteristic difference between the emitter grounding and the collector grounding.This thesis gives the whole dissertation on the device design, simulation, test and analysis to the RTT. This work is good for the research and application of the RTT in the future.