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Investigation On Material Growth And P-type Doping Of GaN Film On Si Substrate Using MOCVD

Posted on:2005-03-22Degree:MasterType:Thesis
Country:ChinaCandidate:Z ZhaoFull Text:PDF
GTID:2168360125461069Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
GaN is a promising material for blue opto-electronic devices and high-power, high-temperature devices. Due to the numerous advantages of Si substrate: low cost, large scale availability with high quality, good thermal and electrical conductivities, and possible removing by chemical etching, many groups are working to fabricate GaN-based devices on Si substrate. Up to date, it is still very hard to grow GaN bulk crystals, so the heteroepitaxial growth of high quality GaN thin films is the premise for the development of GaN-based devices. Compare to sapphire substrate, the poor nucleation and the difference in thermal and lattice coefficient between GaN and Si make it difficult to grow high quality GaN film on Si. It is still a challenge work to fabricate GaN-based devices on Si substrate.In this paper, a comprehensive review of the research history and current status of GaN material preparation and characterizations are discribed. On the basis of home-made MOCVD system, we carried out a detailed study of GaN epitaxy and p-type doping on silicon substrates is conducted and achieved some encouraging results.The main work are summerised as the following:1. Wurtzite single crystalline GaN on Si (111) substrates using high-temperature A1N as a buffer layer in a home-made MOCVD system is reported. HRXRD and SEM indicated a very good crystal quality, which was among the best results ever reported.2. P-type conductivity was succesesfuly achieved using Cp2Mg as precursor via MOCVD system. The carrier concentration and mobility of p-type GaN were 7.84 l0-8 cm-3 and 5.50cm2/V.s respectively, characterized by van der Pauw Hall measurement. HRXRD showed very good crystal quality.3. The relationship between rapid thermal annealing(RTA) and the dislocations in p-doped GaN via MOCVD was studied. The core structure models of dislocations were used to interpret the relations we have found.
Keywords/Search Tags:Investigation
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