The Investigation Of Total Dose Radiation Hardness Technique For MOS Devices

The total dose radiation effects of MOS structures and their investigation are reviewed and discussed in this dissertation .The well known theory for the characterization of both oxide and interface trap charges is also discussed. Based on this theory ,we investigated the y total dose hardening process for 54HC series MOS gate circuits. The obtained results have been applied to the development of 54HC10RH device. The fabricated device was tested by using American military standards MIL-M-38510 and showed a y total dose hardness of over 2 X 106rad(Si) , having met customer's requirements. The effects of SiO2 /Si charges on the threshold voltage of four terminal MOSFET structures under high field stress were studied and some interesting results have been obtained. It is a qualitative method to estimate effects of high total dose radiation for MOS device. According to the rule of SiO2/Si charge changes with radiation, a total dose hardness design has been proposed for simple CMOS logic gate circuits and its SPICE simulation results were presented.