Investigation On Materials Growth And Device Fabrication Of Schottky Barrier Diodes

Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. It has the advantages of low turn-on voltage and high response frequency, compared with PN junction diodes. Schottly Barrier Diode can be used as rectifying and continuous-flow unit in high frequency rectifying, switching and holding circuit, yet reducing the power consumption and circuit noise, enhancing the circuit efficiency and operation frequency. As the development of electrical and electronic technology, there should be an extensive prospect of Schottky barrier diode with its merits of high response frequency and low power consumption.Series resistance is an important factor confining the response speed of Schottky barrier diode. Different from fabricating SBD with bulk semiconductor, thin semiconductor films were utilized as the active layer in order to minimize the series resistance. Si epilayer with sub-micro thickness was deposited by Ultra High Vauum Chemical Vapor Deposition (UHV-CVD). The SBD with rectifying performance was developed, using Si epilayer as the active layer.An instructive attempt was made by using new semiconductor materials for SBD application. For the first time, ZnO thin film SBD was fabricated, which is an important step extending our research from materials growth to device development.The concrete work in this thesis:1) Fabrication of high response frequency SBD using thin Si epi-layer.a) Si thin film with sub-micro thickness was epitaxial grown on heavy-doped Si substrate by Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD).b) SBD was made using the Si epilayer as the active layer, qualified with a set of device technology.2) SBD was made using ZnO thin film as the active layer, which is a first time attempt.-2-a) First time, high C-axial orientation ZnO thin film was deposited on Al membrane supported on Si substrate.b) A set of device fabrication technology was developed to realize ZnO SBD. Obvious rectifying characteristic was obtained using Pt as Schottky contact electrode with ZnO.c) After improving the ZnO SBD, including the device structure and fabrication technology, Au/ZnO/Al SBD was fabricated with an improved rectifying characteristic.