A Study Of High Frequency Characteristics For SIO MOSFET

A DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered. The drain current and the threshold voltage are calculated, and the results fit the experimental data quite well. Based on the static model, the general relation between the small signal current and the small signal voltage is presented by solving the AC small signal equations. Meanwhile, the four intrinsic y-parameters, current gain and the unilateral power gain are obtained and compared to the experimental data to prove the high frequency small signal model. The corresponding equivalent circuit is very simple and accurate. Also the model is applied to analyze the several main parameters affecting the frequency characteristics of SOI MOSFET. Finally, the methods for improving the high frequency properties are discussed by analyzing the delay time and the rise time of SOI MOSFET.