Design And Fabrication Of 3300V-50A IGBT Chip For Power Grid

In the application of power control in power electronic devices since the last century since 60 s,through the half control device,full current control device and voltage control device of three stages of development,on the performance of power electronic devices are increasingly high requirements.Insulated gate bipolar transistor(IGBT)is a power electronic switching device nearly ideal,especially in the smart grid is more and more widely used.This thesis studies 3300 V IGBT aiming at the demand of power system,the primary works are presented as follows:(1)Studied the design method of 3300 V IGBT cellular structure,including substrate material,vertical structure and structural configuration.Optimized the IGBT cell size,designed the P-well dose which affect the threshold voltage,and analysed the P+ collector doping concentration effect of IGBT's static and dynamic characteristics.(2)Studied the 3300 V IGBT terminal design technology,analysed the advantage and disadvantage of different junction termination structure,and selected the multilevel field plate as the design scheme of this project.Simulated the influence of N-ring and P-ring's implantation dose and junction depth on the terminal blocking voltage,and got the optimum value.Meanwhile,simulation analysed the metal field plate length and Si/SiO2 interface charge which are easy to change in the manufacture,design a high voltage terminal structure that blocking voltage is more than 4000 V.(3)Arounding the process requirment of 3300 V IGBT chip,studied the key manufacturing process including spacer formation,trench contact etching and bank P+ activation,and developed the the whole process flow of chip manufacturing.For translation the TCAD simulation parameters to the graphic that can be indenfied by processing equipment,designed the layout using the software.This topic successfully developed the 3300 V-50 A IGBT chip,the main structure and technological process are independent development.Testing results show that the blocking voltage is more than 4300 V voltage,on-state drop voltage is from 3.6 to 3.8 V,and the threshold voltage is about 5.5 V.The performance indicators achieve the expectant targets and successfully passed the 168 hours of HTRB and HTGB reliability assessment.