Analysis And Design Of New High Voltage And Low Loss IGBT

Insulated gate bipolar transistors?IGBT?which as the core electronic devices are widely used in automotive,railway,home appliances,communications and aerospace fields.The extensive use of IGBT greatly improves the performance of power electronic system.The development of IGBT has been devoted to not only improve the trade-off relationship between the on state voltage drop V_ce?on?and turn off energy loss E_off,but also improve the trade-off relationship between the turn on energy loss E_on and the dV_AK/dt of the Free-Wheeling Diode?FWD?during reverse recovery period.In this paper,two kinds of new IGBT structures are proposed to improve the tradeoff characteristics of IGBT.The main contents are as follows:1.The first type of IGBTs proposed is trench IGBT structure integrated with PMOS,including the Super Body Layer IGBT with PMOS?PSBL IGBT?and GGEE type IGBT with PMOS?PGE IGBT?.PSBL IGBT which integrates the PMOS structure in the device,not only improves the Conduction characteristics and breakdown characteristics of the device,but also reduces the turn off energy loss of the device by 72.7%compared with the traditional structure under the same on state voltage drop V_ce?on?.Under the same on state energy loss E_on,the dV_AK/dt of the Free-Wheeling Diode during reverse recovery period is reduced by 17%compared with the traditional structure.PGE IGBT with PMOS is integrated in the device,which makes the C_rss of the PGE IGBT reduce 39.0%compared with the traditional structure.Under the same on state voltage drop V_ce?on?,the turn off energy loss of the PGE IGBT reduces 61.8%compared with the traditional structure.2.The second type of IGBTs proposed is IGBT structure with Split Gate.Firstly,analyzing the difference of the application of the Split Gate structure in the IGBT structure with or without n-type carrier storage layer under the voltage level of 600V and 1200V.The thick oxide layer of the Split Gate trench can reduce the electric field concentration at the bottom of the groove,thus increasing the breakdown voltage of the device,reducing the miller capacitance of the device and increasing the switching speed of the device.But the low potential of the Split Gate makes the n-type silicon on the side wall unable to form an accumulation layer when the device turn on,which increases the on state voltage drop of the device.Therefore,high doping concentration of n-type carrier storage layer is needed to eliminate the effect.A Split Gate IGBT with PMOS?PSG IGBT?structure is proposed,it not noly improve the breakdown voltage of the device,but also reduce the miller capacitance of the device.Finally,compared with the traditional structure,the new structure reduces the C_rss by 99.7%.Under the same on state voltage V_ce?on?,the turn off energy loss E_off of the PSG IGBT reduces 79.1%compared with the traditional structure.Under the same turn on energy loss E_on,the dV_AK/dt of the Free-Wheeling Diode?FWD?during reverse recovery period is reduced by 40.2%compared with the traditional structure.