| In order to observe and analyze the behavior of semiconductor devices under radiation exposure, a real time measurement system has been built so that investigations can be carried out before, during, and after radiation exposure. The system consists of an IBM personal computer with IEEE488 I/O interface board and various Hewlett-Packard instruments. Real time measurement and device parameter characterization programs have been written to accommodate the study. Such a system provides the ability to do not only direct and dynamic measurements, but also comprehensive parameter analyses for semiconductor devices.; It is well known that MOS devices are vulnerable to radiation produced ionization. Many MOS device parameters are radiation sensitive. Based on real time measurement results and the mathematical model of a CMOS inverter, a radiation hardening design method has been developed. With the example of noise margin optimization, the concept of desensitizing device parameters is expected to minimize radiation damage to MOS integrated circuits. |
