Study On The Real-time Measurement Technology Of Semiconductor Thin Film Properties

During the growth process of semiconductor thin films, the thin films properties, such as thin film stress, growth rate, thickness, refractive index etc, are always needed to measure in real time in order to precisely control their growth process. Domestic measuring technologies on thin film properties are almost off-line and foreign measuring devices mostly aim to measure individual property. On the basis of international broad research on thin film measuring technologies, the in-situ measurement blueprint of thin film multi-properties based on substrate curvature measuremen method and reflected light interference method is conducted. At the same time, the relative device is designed and the feasibility that it can be used to measure thin film multi-dot stress, growth rate, thickness, refractive index etc. in real time is demonstrated in detail.As to the practical engineering work, many main parts of the device including thin film in-situ stress array sensor, the improvement scheme of LD full-loop control and driving circuit is suggested ,CCD detector background noise controlled system,the interference simulation experiment for thin film growth is conducted,thin film properties calculating software etc, have been analyzed and designed. At last, part experiments and conclusions are given and the further research and improvements needed to do in the near future are expected.