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High-power near-resonant 1.55 micrometer-emitting InGaAsP/InP antiguided diode laser arrays

Posted on:1998-12-03Degree:Ph.DType:Dissertation
University:The University of Wisconsin - MadisonCandidate:Bhattacharya, ArnabFull Text:PDF
GTID:1468390014475399Subject:Engineering
Abstract/Summary:
This dissertation discusses design aspects, materials growth issues, device fabrication and characterization of high-power phase locked arrays of diode lasers and describes a series of experiments with progressive improvements in output power and beam quality from the first high-power 1.55;The best results obtained from strained-layer quaternary-quantum-well InGaAsP/InP 1.55...
Keywords/Search Tags:High-power
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