Analysis techniques and modeling for noise and distortion of CMOS down-conversion mixers

Analysis techniques and modeling for complementary metal oxide semiconductor (CMOS) down-conversion mixers are presented. The signal processing of time-varying CMOS down-conversion mixers is presented, and the analysis techniques to exploit the noise and distortion behaviors of time-varying CMOS down-conversion mixers are presented.; Analysis techniques and modeling for short channel metal oxide semiconductor (MOS) differential pairs, which do not require numerical methods, are developed. Equations describing the transfer characteristics of the short channel MOS differential pair are derived. The equations show that the short channel MOS differential pair is more linear than the long channel MOS differential pair. The simple approximated equations for long and short channel MOS differential pairs are developed.; The noise behavior of time-varying CMOS down-conversion mixers is presented. The transfer characteristics of the MOS differential switch are analyzed. The conversion gain and noise figure of the time-varying CMOS down-conversion mixer are calculated and estimated with formulae. The formulae show that the minimum noise figure appears at the maximum conversion gain.; The distortion behavior of time-varying CMOS down-conversion mixers is presented. The unified single current model valid in all operating regions is presented. The distortion mechanism of time-varying CMOS down-conversion mixers are presented The third-order intermodulation (IM3) distortions of the switch and the radio frequency (RF) transistor are presented. The input third-order intercept point (IP3) is estimated with a formula.; The analysis techniques and modeling for short channel MOS differential pairs and CMOS down-conversion mixers are verified with simulations. The transfer characteristics of short channel MOS differential pairs are simulated at different design parameters. The conversion gain and noise figure of a single-balanced CMOS downconversion mixer are simulated at differential local oscillator (LO) amplitudes and bias currents. The third-order intermodulation measurement of the single-balanced CMOS down-conversion mixer at 1 GHz are simulated at different bias currents.