Fabrication and characterization of 3C-silicon carbide micro sensor for wireless blood pressure measurements

A potentially implantable single crystal 3C-SiC pressure sensor for blood pressure measurement was designed, simulated, fabricated, characterized and optimized. This research uses a single crystal 3C-SiC, for the first time, to demonstrate its application as a blood pressure measurement sensor. The sensor, which uses the epitaxial grown 3C-SiC membrane to measure changes in pressure, is designed to be wireless, biocompatible and linear. The SiC material was chosen for its superior physical, chemical and mechanical properties; the capacitive sensor uses a 3C-SiC membrane as one of the electrodes; and, the sensor system is wireless for comfort and to allow for convenient reading of real-time pressure data (wireless communication is enabled by connecting the sensor parallel to a planar inductor). Together, the variable capacitive sensor and planar inductor create a pressure sensitive resonant circuit. The sensor system described above allows for implantation into a human patient's body, after which the planar inductor can be coupled with an external inductor to receive data for real-time blood pressure measurement. Electroplating, thick photo-resist characterization, RIE etching, oxidation, CVD, chemical mechanical polishing and wafer bonding were optimized during the process of fabricating the sensor system and, in addition to detailing the sensor system simulation and characterization; the optimized processes are detailed in the dissertation.;This absolute pressure sensor is designed to function optimally within the human blood pressure range of 50-350mmHg. The layout and modeling of the sensor uses finite element analysis (FEA) software. The simulations for membrane deflection, stress analysis and electro-mechanical analysis are performed for 100 &mgr;m2 and 400&mgr;m2sensors. The membrane deflection-pressure, capacitance-pressure and resonant frequency-pressure graphs were obtained, and detailed in the dissertation, along with the planar inductor simulation for differently sized inductors. Ultimately, an optimized sensor with a size of 400&mgr;m2 was chosen because of its high sensitivity. The sensor, and the planar inductor, which is 3mm 2, is comparable to the presently researched implantable chip size. The measured inductance of the gold electroplated inductor is 0.371&mgr;H. The capacitance changes from 0.934 pF to 0.997pF with frequency shift of 248MHz to 256 MHz. The sensitivity of the sensor is found to be 0.21 fF/mmHg or 27.462 kHz/mmHg with an average non-linearity of 0.23216%.