Study Of Electromagnetic Integrity In The Circuits System Of PCB And Package Level

The trend in the electronic system to the high speed, high power, high density, lowvoltage and high current, high-speed interconnect effects such as signal integrity, powerintegrity, and electromagnetic compatibility become the dominant factor limiting overallperformance of high speed circuits and system on package. On the one hand, at the timeof the switching state the chip needs to draw a large number of transient current, whichresulting in fluctuations in the power supply, and the rail voltage fluctuations in thepower distribution network could form a distributed power supply noise. Meanwhile,power supply noise could be coupled through the power distribution network to thesignal line, causing signal distortion, eye closure and other signal integrity issues.Electromagnetic integrity has become one of the major issues in printed circuit boardand integrated circuit design. As the increasing of the data rate of the system, the restrictrelationship between signal integrity and power integrity has become more prominent.To improve the system performance in high-speed circuit, it is necessary to analysis thesignal integrity and power integrity simultaneously. Base on existing research results, asystematic analysis of the circuit board level and package level electromagneticintegrity were conducted in this dissertation. The interaction mechanism of signalintegrity and power integrity, the analysis method of signal integrity and power integrity,the effects of return path disconnect on signal integrity, the method of achieve usefulcircuits based on changing power distribution network and the issues of signal integrityand electromagnetic interference in three dimension integrated circuits based on throughsilicon vias are studied carefully. The main research achievements are as follows:1. The planar Electromagnetic Band-Gap structure used in high-speed circuits isanalyzed in this dissertation. A novel planar Electromagnetic Band-Gap structure withultra wideband simultaneous switch noise suppression is proposed. The design,simulation, analysis and application of embedded planar compact electromagneticband-gap structure for high-speed digital circuit or mixed circuit application areconducted. Some practical design tips are deduced in the paper.2. The effects of return current path disconnect on signal integrity are discussedcarefully. The effects of two main return paths disconnect structure, such as slots onpower plane and vias, are described. Based on microwave network methods combinedthe actual three-dimensional structure, a fast method for solving the crosstalk inhigh-speed circuits is proposed. The shorting lines which cross the slot in return path plane is used to bypass slot line mode in order to improve transfer performance andsuppress crosstalk. With comparison to traditional decouple capacitor method, themethod proposed in this dissertation has benefits of wide bandwidth, easy layout andlow cost. For practical engineering applications, a complete study of the slot in powerplane with a ground plane under it is done. The signal transmission characteristics andcrosstalk affected by the power ground plane pair resonance is given in the paper.3. The different useful circuits are accomplished through changing the structure ofcurrent return path. A new microstrip vertical transition based on via in multilayeredprinted circuit board is proposed for ultra wide-band (UWB) application. The planarelectromagnetic band-gap unit is etched on power plane around the vias to suppressresonance and reduce self-impedance of the power distribution network (PDN), andthen transmission performance is improved. By comparison with the method of addingshorting vias between PDN, the structure proposed in this dissertation benefits of lowcost, deeply noise suppression and small factor with considerable performance. Themushroom liked Electromagnetic Band-Gap is introduced in the differential circuits tosuppression the common-mode noise.4. The related problem in three-dimension integrated circuits based on throughsilicon via are discussed in the paper. The electrical property and the methods of extractthe RLGC parameters of the TSV are studied carefully. The crosstalk of the TSVs areanalyzed based the electrical property. Some factors affected the performance, such asthe TSV structure and the placement methods, are simulated with3-D full wavesimulator, and some useful design tips in the3-D integrated designs are introduced inthe paper.